2SJ552L-E技术资料参数行情报价瑞萨RENESAS-114ic电子网

首页 >2SJ552L-E>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ552L-E	文件：96 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：96 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ552S	文件：96 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：96 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ552S	文件：56.44 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. 文件：56.44 Kbytes 页数：9 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ552STL-E	文件：96 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：96 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS

更多2SJ552L-E供应商更新时间2025-10-12 11:00:00