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2SJ552L-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ552

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ552

SiliconPChannelMOSFETHighSpeedPowerSwitching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

2SJ552(L)_15

SiliconPChannelMOSFET

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ552L

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.055Ω(MAX)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SJ552L

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ552L

SiliconPChannelMOSFETHighSpeedPowerSwitching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

2SJ552S

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ552S

SiliconPChannelMOSFETHighSpeedPowerSwitching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

2SJ552STL-E

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

详细参数

  • 型号:

    2SJ552L-E

  • 制造商:

    Renesas Electronics Corporation

  • 功能描述:

    Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) LDPAK(L) Box Bulk

供应商型号品牌批号封装库存备注价格
HITACHI/日立
23+
TO-262
50000
全新原装正品现货,支持订货
询价
RENESAS
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
询价
日立
22+
6000
263
十年配单,只做原装
询价
RENESAS/瑞萨
24+
NA/
31773
原装现货,当天可交货,原型号开票
询价
RENESAS/瑞萨
2022+
TO-263
30000
进口原装现货供应,原装 假一罚十
询价
RENESAS/瑞萨
20+
TO-263
32500
现货很近!原厂很远!只做原装
询价
RENESAS
25+
TO-263
37650
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
RENESAS/瑞萨
24+
TO-263
60000
全新原装现货
询价
RENESAS/瑞萨
24+
TO-263
30000
只做正品原装现货
询价
NK/南科功率
2025+
TO-263
986966
国产
询价
更多2SJ552L-E供应商 更新时间2025-7-28 11:00:00