2SJ574

Silicon P Channel MOS FET High Speed Switching

Features •Lowon-resistance RDS=1.1Ωtyp.(VGS=-10V,ID=-150mA) RDS=2.2Ωtyp.(VGS=-4V,ID=-150mA) •4Vgatedrivedevice. •Smallpackage(MPAK)

2SJ574

Silicon P Channel MOS FET High Speed Switching

Features •Lowon-resistance RDS=1.1Ωtyp.(VGS=–10V,ID=–150mA) RDS=2.2Ωtyp.(VGS=–4V,ID=–150mA) •4Vgatedrivedevice. •Smallpackage(MPAK)

2SJ574

Pch Single Power Mosfet -30V -0.3A 1300Mohm Mpak/Sc-59;

The 2SJ574 is a Pch Single Power Mosfet -30V -0.3A 1300Mohm Mpak/Sc-59.

2SJ574

P-Channel 60 V (D-S) MOSFET

2SJ574_11

Silicon P Channel MOS FET High Speed Switching

2SJ574_15

Silicon P Channel MOS FET High Speed Switching

2SJ574BP91TL

P-Channel 60 V (D-S) MOSFET

2SJ574BPTL

P-Channel 60 V (D-S) MOSFET