Silicon P Channel MOS FET High Speed Switching

Features • Low on-resistance RDS = 1.1 Ω typ. (VGS = -10 V , ID = -150 mA) RDS = 2.2 Ω typ. (VGS = -4 V , ID = -150 mA) • 4 V gate drive device. • Small package (MPAK)

文件：39.95 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

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Silicon P Channel MOS FET High Speed Switching

Features • Low on-resistance RDS = 1.1 Ω typ. (VGS = –10 V, ID = –150 mA) RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA) • 4 V gate drive device. • Small package (MPAK)

文件：58.86 Kbytes 页数：10 Pages

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The 2SJ574 is a Pch Single Power Mosfet -30V -0.3A 1300Mohm Mpak/Sc-59.

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