Power switching MOSFET

HITACHI

日立

Silicon P Channel MOS FET

文件：115.51 Kbytes 页数：11 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

文件：57.14 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

• Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

文件：96.13 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET

• Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

文件：96.13 Kbytes 页数：9 Pages

RENESAS

瑞萨