2SJ549L-E规格书应用电路库存现货瑞萨-114ic电子网

首页 >2SJ549L-E>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ549L-E	文件：97.39 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.11 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching 文件：97.39 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ549S	文件：56.25 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.11 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching 文件：56.25 Kbytes 页数：9 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ549S	文件：97.39 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.11 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching 文件：97.39 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ549STL-E	文件：97.39 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.11 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching 文件：97.39 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS

更多2SJ549L-E供应商更新时间2025-12-1 19:22:00