2SJ551STL-E资料使用说明书批发采购瑞萨-114ic电子网

首页 >2SJ551STL-E>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ551STL-E	文件：95.41 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：95.41 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ551	文件：95.41 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：95.41 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ551	文件：55.76 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. 文件：55.76 Kbytes 页数：9 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ551(L)_15	文件：114.91 Kbytes Page：11 Pages	Silicon P Channel MOS FET 文件：114.91 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS

更多2SJ551STL-E供应商更新时间2025-10-5 11:00:00