2SJ550STL-E说明书PDF资料市场行情瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ550STL-E	文件：95.64 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：95.64 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ550	文件：56.87 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. 文件：56.87 Kbytes 页数：9 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SJ550	文件：95.64 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：95.64 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ550	文件：941.18 Kbytes Page：7 Pages	P-Channel 60 V (D-S) MOSFET 文件：941.18 Kbytes 页数：7 Pages	VBSEMI 微碧半导体	VBSEMI

更多2SJ550STL-E供应商更新时间2026-1-19 10:45:00