Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

文件：95.64 Kbytes 页数：9 Pages

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瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

文件：56.87 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

文件：95.64 Kbytes 页数：9 Pages

RENESAS

瑞萨

P-Channel 60 V (D-S) MOSFET

文件：941.18 Kbytes 页数：7 Pages

VBSEMI

微碧半导体