2SJ535-E数据表ic资料贸易商瑞萨RENESAS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ535-E	文件：89.34 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：89.34 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SJ535	文件：300.95 Kbytes Page：2 Pages	isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -30A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 37mΩ(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. 文件：300.95 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
2SJ535	文件：89.34 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：89.34 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SJ535	文件：54.87 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. 文件：54.87 Kbytes 页数：9 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi

更多2SJ535-E供应商更新时间2025-12-15 17:37:00