Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

文件：54.87 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

文件：89.34 Kbytes 页数：8 Pages

RENESAS

瑞萨

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -30A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 37mΩ(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：300.95 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon P Channel MOS FET High Speed Power Switching

HITACHI

日立

Power MOSFETs

Renesas

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

文件：89.34 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET

文件：108.62 Kbytes 页数：10 Pages

RENESAS

瑞萨