| 零件型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
2SJ535 | Silicon P Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS(on)=0.028Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | |
2SJ535 | Silicon P Channel MOS FET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.028Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | |
2SJ535 | Silicon P Channel MOS FET High Speed Power Switching; | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | |
2SJ535 | Power MOSFETs; | RenesasRenesas Technology Corp 瑞萨瑞萨科技有限公司 | Renesas | |
Silicon P Channel MOS FET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.028Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
技术参数
- 封装类型：
TO-220FM
- Nch/Pch：
Pch
- 通道数：
Single
- VDSS (V) 最大值：
-60
- ID (A)：
-30
- RDS (ON)(mΩ) 最大值@4V或4.5V：
55
- RDS (ON)(mΩ) 最大值@10V或8V：
37
- Ciss (pF) 典型值：
2500
- Vgs (off) (V) 最大值：
-2
- VGSS (V)：
20
- Pch (W)：
35
- 应用：
Industrial
- 安装类型：
Through Hole
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
RENESAS |
2020+ |
TO220 |
23 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
HIT |
24+ |
TO-220F |
20000 |
询价 | |||
RENESAS |
17+ |
TO-220F |
6200 |
100%原装正品现货 |
询价 | ||
RENESAS |
20+ |
TO-220F |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
RENESAS/瑞萨 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NEC |
2022+ |
TO-220FM |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
瑞萨 |
24+ |
NA/ |
14568 |
原装现货,当天可交货,原型号开票 |
询价 | ||
RENESAS/瑞萨 |
2022+ |
TO-220F |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
RENESAS/瑞萨 |
20+ |
TO-220F |
32500 |
现货很近!原厂很远!只做原装 |
询价 |
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