2SJ530STL-E资料datasheet下载库存现货瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ530STL-E	文件：94.88 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching. 文件：94.88 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ530STL-E	文件：988.35 Kbytes Page：8 Pages	P-Channel 60-V (D-S) MOSFET 文件：988.35 Kbytes 页数：8 Pages	VBSEMI 微碧半导体	VBSEMI
2SJ530	文件：57.57 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching. 文件：57.57 Kbytes 页数：9 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SJ530L	文件：57.57 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching. 文件：57.57 Kbytes 页数：9 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SJ530L	文件：94.88 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching. 文件：94.88 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS

更多2SJ530STL-E供应商更新时间2026-10-14 14:46:00