2SJ532

Silicon P Channel MOS FET High Speed Power Switching

Features •Lowon-resistance RDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

2SJ532

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

2SJ532

Silicon P Channel MOS FET; • Low on-resistance\n    RDS (on) = 0.042 Ω typ.\n• Low drive current.\n• 4 V gate drive devices.\n• High speed switching.;

Description\nHigh speed power switching

2SJ532

Silicon P Channel MOS FET High Speed Power Switching; • Low on-resistance\n   RDS(on) = 0.042Ω typ.\n• Low drive current.\n• 4V gate drive devices.\n• High speed switching.;

2SJ532-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.