2SJ534-E规格书供应代理瑞萨RENESAS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ534-E	文件：88.86 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：88.86 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SJ534	文件：932.71 Kbytes Page：7 Pages	P-Channel 60 V (D-S) MOSFET 文件：932.71 Kbytes 页数：7 Pages	VBSEMI 微碧半导体	VBSEMI
2SJ534	文件：88.86 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：88.86 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SJ534	文件：52.4 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. 文件：52.4 Kbytes 页数：9 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi

更多2SJ534-E供应商更新时间2025-10-9 11:00:00