2SJ546技术资料参数供应价格瑞萨RENESAS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ546	文件：52.6 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. 文件：52.6 Kbytes 页数：9 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ546	文件：88.68 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：88.68 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SJ546	文件：951.27 Kbytes Page：7 Pages	P-Channel 60-V (D-S) MOSFET 文件：951.27 Kbytes 页数：7 Pages	VBSEMI 微碧半导体	VBSEMI
2SJ546	文件：300 bytes Page：1 Pages	Pch Single Power Mosfet -60V -15A 0.095Mohm To220Cfm The 2SJ546 is a Pch Single Power Mosfet -60V -15A 0.095Mohm To220Cfm.	Renesas 瑞萨	Renesas
2SJ546-E	文件：88.68 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：88.68 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS

更多2SJ546供应商更新时间2025-10-11 14:31:00