Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

文件：52.99 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

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Silicon P Channel MOS FET

• Low on-resistance RDS (on)= 0.028 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

文件：88.91 Kbytes 页数：8 Pages

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isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -30A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.037Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

Pch Single Power Mosfet -60V -30A 0.037Mohm To220Cfm

The 2SJ533 is a Pch Single Power Mosfet -60V -30A 0.037Mohm To220Cfm.

Renesas

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Silicon P Channel MOS FET High Speed Power Switching

HITACHI

日立

Silicon P Channel MOS FET

• Low on-resistance RDS (on)= 0.028 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

文件：88.91 Kbytes 页数：8 Pages

RENESAS

瑞萨