2SJ530S数据表ic资料市场行情瑞萨RENESAS-114ic电子网

首页 >2SJ530S>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ530S	文件：57.57 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching. 文件：57.57 Kbytes 页数：9 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ530S	文件：94.88 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching. 文件：94.88 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ530S	文件：45.38 Kbytes Page：1 Pages	Hight Speed Power Switching Features ● Low on-resistance RDS(on) = 0.08 typ. ● High speed switching ● 4V gate drive devices. 文件：45.38 Kbytes 页数：1 Pages	KEXIN 科信电子	KEXIN
2SJ530STL-E	文件：94.88 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching. 文件：94.88 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ530STL-E	文件：988.35 Kbytes Page：8 Pages	P-Channel 60-V (D-S) MOSFET 文件：988.35 Kbytes 页数：8 Pages	VBSEMI 微碧半导体	VBSEMI
2SJ530S	文件：300 bytes Page：1 Pages	Power MOSFETs	Renesas 瑞萨	Renesas

更多2SJ530S供应商更新时间2025-12-4 10:30:00