MOSFET N-CH 25V 34A POWER56

ONSEMI

安森美半导体

Dual P-Channel 1.8 V Specified PowerTrench MOSFET

General Description This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –6 A, –12 V. RDS(ON) = 18 mΩ @ VGS = –4.5 V RDS(ON) = 22 mΩ @ VGS = –2.5 V RDS(ON) = 30 mΩ @ VGS = –1.

文件：135.26 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual P-Channel 1.8 V Specified PowerTrench MOSFET

General Description This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –6 A, –12 V. RDS(ON) = 18 mΩ @ VGS = –4.5 V RDS(ON) = 22 mΩ @ VGS = –2.5 V RDS(ON) = 30 mΩ @ VGS = –1.

文件：135.26 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual P-Channel 1.8 V Specified PowerTrench MOSFET

General Description This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –6 A, –12 V. RDS(ON) = 18 mΩ @ VGS = –4.5 V RDS(ON) = 22 mΩ @ VGS = –2.5 V RDS(ON) = 30 mΩ @ VGS = –1.

文件：135.26 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司