N-Channel PowerTrench짰 MOSFET 30 V, 6.9 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switc

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Fairchild

仙童半导体

N 沟道，PowerTrench® MOSFET，30V，6.9mΩ

该 N 沟道 MOSFET 使用同步或传统的开关PWM控制器，专为提高DC/DC转换器的整体效率并最大限度降低其开关节点振铃噪声而设计。 它为实现低栅极电荷、低RDS(on)、高速开关和体二极管反向恢复性能而优化。 •最大值 rDS(on) = 6.9 mΩ（VGS= 10 V, ID = 14 A 时）\n•最大值 rDS(on) = 11 mΩ（VGS= 4.5 V且ID = 11 A）\n•先进的封装技术和硅技术相结合，实现了低rDS(on)和高效率\n•新一代的增强型体二极管技术，专为软恢复而设计\n•MSL1耐用封装设计\n•100%经过UIL测试\n•符合 RoHS 标准;

ONSEMI

安森美半导体

Gated PMT Modules

The H7680/-01 PMT modules are capable of high-speed, high-repetition gated operation. An optimum design in the combination of circuit and photomultiplier tube delivers excellent gating characteristics including a minimum gate width of 30 ns (H7680-01), 100 kHz repetition rate, and a gate extinctio

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HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Backflush protection circuit with built-in inductive load current

文件：598.92 Kbytes 页数：6 Pages

HMSEMI

华之美半导体

Single-Chip Signal Processor for Color TV Use

Overview The LA7680, LA7681 signal processors provide all the components required to decode PAL or NTSC Color television signal. On-chip circuit include VIF, SIF, a video processors, a chroma demodulator, and deflection drivers.

文件：213.23 Kbytes 页数：10 Pages

SANYO

三洋