不对称双 N 沟道 MOSFET，PowerTrench® 功率级，25V

该器件在双PQFN封装中包括两个专用N沟道MOSFET。 该开关节点通过内部连接，能够为同步降压转换器提供简单的布局和布线。 控制MOSFET (Q1)和同步SyncFET™ (Q2)旨在提供优化的功效。 • Q1： N沟道\n•在VGS = 4.5 V且ID = 14 A时，最大值RDS(on) = 8.1 mΩ Q2： N沟道\n•低电感封装缩短了上升/下降时间，从而减少了开关损耗\n•MOSFET集成可实现降低电路电感以及开关节点振铃噪声的优化布局\n•符合RoHS标准;

ONSEMI

安森美半导体

PowerTrench짰 Power Stage 25 V Asymmetric Dual N-Channel MOSFET

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Fairchild

仙童半导体

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 阵列 描述：MOSFET 2N-CH 25V 15A/30A 8PQFN

ONSEMI

安森美半导体

FlashStation FS3600

Highlights • High Performance Over 195,000 iSCSI 4K random write IOPS1 • Easy System Administration Easy to deploy with an intuitive user interface • Effortless Capacity Expansion Flexibly scale up to 72 drives2 to increase storage capacity as demand grows • Virtualization-Ready Integr

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SYNOLOGY

群晖科技

H E3600 Min ia tu re S .I.L . R e lay F e a tu re s a n d Be n e fits

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Hamlin

7.6mm (0.3 inch)/10.9mm (0.43 inch) Seven Segment Display

Description The 7.6 mm (0.3 inch) and 10.9 mm (0.43 inch) LED seven segment displays are designed for viewing distances up to 3 metres (10 feet) and 5 metres (16 feet). These devices use an industry standard size package and pinouts. All devices are available as either common anode or common cath

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HP

安捷伦