25V非对称双N沟道MOSFET PowerTrench®功率级

该器件在双PQFN封装中包括两个专用N沟道MOSFET。 该开关节点通过内部连接，能够为同步降压转换器提供简单的布局和布线。 控制MOSFET (Q1)和同步SyncFET (Q2)旨在提供优化的功效。 • Q1: N-ChannelMax rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 AMax rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A\n• Q2: N-ChannelMax rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 25 AMax rDS(on) = 3.2 mΩ at VGS = 4.5 V, ID = 22 A\n• Low inductance packaging shortens rise/fall times, resulting in lower switching ;

ONSEMI

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PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET

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FAIRCHILD

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DUAL HIGH SPEED DRIVER

DESCRIPTION The SG1626, 2626, 3626 is a dual inverting monolithic high speed driver that is pin for pin compatible with the DS0026, TSC426 and ICL7667. This device utilizes high voltage Schottky logic to convert TTL signals to high speed outputs up to 18V. The totem pole outputs have 3A peak curr

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MICROSEMI

美高森美

Brushless DC Motor Controller

文件：209.64 Kbytes 页数：15 Pages

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POWERHALL SENSOR/DRIVERS FOR BRUSHLESS DC MOTORS

RATIOMETRIC, LINEAR HALL-EFFECT SENSORS FOR HIGH-TEMPERATURE OPERATION The A3515– and A3516– are sensitive, temperature-stable linear Hall effect sensors with greatly improved offset characteristics. Ratiometric, linear Hall-effect sensors provide a voltage output that is proportional to the appl

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ALLEGRO