P-Channel PowerTrench짰 MOSFET -30 V, -18 A, 20 m廓

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

文件：266.29 Kbytes 页数：7 Pages

Fairchild

仙童半导体

P 沟道 PowerTrench® MOSFET -30V，-18A，20mΩ

这一P沟道MOSFET器件采用飞兆半导体的高级PowerTrench®工艺生产，该工艺专为最大限度地降低通态电阻而量身定制。 该器件非常适用于笔记本电脑和便携式电池组中的电源管理和负载开关应用。 •在VGS = -10 V且ID = -9.0 A时，最大值rDS(on) = 20 mΩ \n•在VGS = -4.5 V且ID = -6.5 A时，最大值rDS(on) = 37 mΩ \n•为电池应用提供了扩展的VGSS电压范围(-25 V)\n•高性能沟道技术可实现极低的RDS(on)\n•高功率和高电流处理能力\n•HBM ESD保护级别>7 KV典型值（注4）\n•100%经过UIL测试\n•终端是符合RoHS标准的无铅产品;

ONSEMI

安森美半导体

P-Channel Logic Level PowerTrench?줞OSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features • –9 A, –30 V. RDS(ON) = 0.017 Ω @ VGS =

文件：264.93 Kbytes 页数：5 Pages

Fairchild

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P-Channel Logic Level PowerTrenchTM MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –8.8 A, –30 V RDS(ON) = 20 mW @ VGS

文件：637.39 Kbytes 页数：8 Pages

Fairchild

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30V P-Channel PowerTrench MOSFET

文件：65.65 Kbytes 页数：5 Pages

Fairchild

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