FDMS3672

N-Channel UltraFET Trench MOSFET 100V, 22A, 23mohm

GeneralDescription UItraFETdevicescombinecharacteristicsthatenablebenchmarkefficiencyinpowerconversionapplications.OptimizedforrDS(on),lowESR,lowtotalandMillergatecharge,thesedevicesareidealforhighfrequencyDCtoDCconverters. Features ■MaxrDS(on)=23mΩatVGS

FDP3672

N-ChannelPowerTrenchMOSFET105V,41A,33m?

Features •rDS(ON)=25mΩ(Typ.),VGS=10V,ID=41A •Qg(tot)=28nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •Optimizedefficiencyathighfrequencies •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff

FDP3672

iscN-ChannelMOSFETTransistor

FDS3672

N-ChannelPowerTrenchMOSFET100V,7.5A,22m?

Features •rDS(ON)=19mΩ(Typ.),VGS=10V,ID=7.5A •Qg(tot)=28nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •Optimizedefficiencyathighfrequencies •UISCapability(SinglePulseandRepetitivePulse) Applications •DC/DCconvertersandOff-LineUPS •Distributed

FDMS6681Z

FAIRCHILD
QFN-8