N-Channel PowerTrench짰 MOSFET 30 V, 60 A, 0.99 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on

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N-Channel PowerTrench짰 MOSFET 30 V, 100 A, 0.99 m廓

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N 沟道，PowerTrench® MOSFET，30V，267A，0.99mΩ

此N沟道MOSFET使用同步或传统的开关PWM控制器，专为提高DC/DC转换器的整体效率并最大限度降低其开关节点振铃噪声而设计。 已针对低栅极电荷和极低rDS(ON)进行了优化。 •最大rDS(on) = 1.1 mO（VGS = 10 V, ID = 36 A）\n•最大rDS(on) = 1.6 mO（VGS = 4.5 V, ID = 32 A）\n•先进的封装技术和硅技术相结合，实现了低rDS(on)和高效率\n•MSL1耐用封装设计\n•100%经过UIL测试\n•符合RoHS标准;

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DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

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N-Channel Dual CoolTM PowerTrench짰 MOSFET 30 V, 100 A, 0.99 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

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N-Channel PowerTrench짰 MOSFET 30 V, 100 A, 0.99 m廓

文件：248.99 Kbytes 页数：7 Pages

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N 沟道，双 CoolTM 56 PowerTrench® MOSFET，30V，100A，0.99mΩ

此 N 沟道 MOSFET 采用飞兆半导体先进的 PowerTrench®工艺生产。先进的硅技术和 Dual Cool™ 封装技术完美融合，可在提供最小 rDS(on)的同时通过极低的结至环境热阻保持卓越的开关性能。 •Dual Cool™ 顶侧冷却PQFN封装\n•VGS = 10V，ID = 36A时，最大rDS(on) = 0.99mΩ\n•VGS = 4.5 V，ID = 32 A时，最大rDS(on) = 1.55mΩ\n•高性能沟道技术可实现极低的rDS(on)\n•符合 RoHS 标准;

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