N 沟道，PowerTrench® SyncFET™，25V，130A，1.2mΩ

FDMS7556S设计用于最大限度地降低功率转换应用中的损耗。 先进的硅和封装技术完美融合，在保持卓越开关性能的同时，提供了最低的rDS(on)。 该器件可被额外作为一个有效的单片肖特基体二极管使用。 •VGS = 10V，ID = 35A时，最大rDS(on) = 1.2mΩ\n•VGS = 4.5 V，ID = 31 A时，最大rDS(on) = 1.65mΩ\n•先进的封装和硅技术完美融合，实现了低rDS(on)和高效率\n•SyncFET肖特基体二极管\n•MSL1耐用封装设计\n•100%经过UIL测试\n•符合RoHS标准;

ONSEMI

安森美半导体

General purpose CMOS timer

DESCRIPTION The ICM7555 is a CMOS timer providing significantly improved performance over the standard NE/SE555 timer, while at the same time being a direct replacement for those devices in most applications. Improved parameters include low supply current, wide operating supply voltage range, low

文件：105.73 Kbytes 页数：9 Pages

PHI

PHI

Precision Timing Pulse Generation Sequential Timing Time Delay Generation Pulse Width Modulation Missing Pulse Detector

General Purpose Timers The ICM7555 and ICM7556 are CMOS RC timers providing significantly improved performance over the standard SE/NE 555/6 and 355 timers, while at the same time being direct replacements for those devices in most applications. Features • Exact Equivalent in Most Cases for SE/

文件：218.62 Kbytes 页数：11 Pages

INTERSIL

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

文件：4.13074 Mbytes 页数：122 Pages

INTERSIL