丝印：FDB2532；Package：TO-263；MOSFET – N-Channel, POWERTRENCH 150 V, 79 A, 16 m

Features • RDS(ON) = 14 m (Typ.), VGS = 10 V, ID = 33 A • Qg (tot) = 82 nC (Typ.), VGS = 10 V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applicatio

文件：1.15401 Mbytes 页数：15 Pages

ONSEMI

安森美半导体

丝印：FDB2532；Package：TO-263；MOSFET – N-Channel, POWERTRENCH 150 V, 79 A, 16 m

Features • RDS(ON) = 14 m (Typ.), VGS = 10 V, ID = 33 A • Qg (tot) = 82 nC (Typ.), VGS = 10 V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applicatio

文件：1.15401 Mbytes 页数：15 Pages

ONSEMI

安森美半导体

N-Channel PowerTrench MOSFET 150V, 79A, 16m?

Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A • Qg(tot) = 86nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82884 Applications • DC/DC conve

文件：275.65 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 79A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：332.7 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel PowerTrench짰 MOSFET 150V, 79A, 16m廓

文件：210.54 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel PowerTrench짰 MOSFET 150V, 79A, 16m廓

文件：216 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司