丝印：FDD9509L；Package：D-PAK；MOSFET - P-Channel PowerTrench

文件：337.82 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：FDD9509L；Package：D-PAK；MOSFET - P-Channel PowerTrench

文件：337.82 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -90A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ(Max) @VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：353.25 Kbytes 页数：2 Pages

ISC

无锡固电