丝印：FDS4435BZ；Package：SOP-8；-30V P-Channel MOSFET

General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features VDS (V) =-30V ID = -8.8A (VGS = -10V) RDS(ON)

文件：429.15 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：FDS4435BZ；Package：SO-8；P-Channel PowerTrench MOSFET -30V, -8.8A, 20mΩ

Features
Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A
Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A
Extended VGSS range (-25V) for battery applications
HBM ESD protection level of ±3.8KV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and

文件：330.44 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：FDS4435BZ；Package：SO-8；P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m

文件：416.89 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：FDS4435BZ；Package：SOP-8；-30V P-Channel MOSFET

General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features VDS (V) =-30V ID = -8.8A (VGS = -10V) RDS(ON)

文件：429.15 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：FDS4435BZ；Package：SO-8；P-Channel PowerTrench MOSFET -30V, -8.8A, 20mΩ

Features
Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A
Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A
Extended VGSS range (-25V) for battery applications
HBM ESD protection level of ±3.8KV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and

文件：330.44 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：FDS4435BZ；Package：SO-8；P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m

文件：416.89 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

30 Volt P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

文件：94.81 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m廓

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

文件：288.78 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m廓

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

文件：288.78 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel 30-V (D-S) MOSFET

文件：1.00471 Mbytes 页数：9 Pages

VBSEMI

微碧半导体