FDS4435BZ

Marking：FDS4435BZ；Package：SOP-8；-30V P-Channel MOSFET

GeneralDescription ThisdeviceiswellsuitedforPowerManagementandload switchingapplicationscommoninNotebookComputersand PortableBatteryPacks. Features VDS(V)=-30V ID=-8.8A(VGS=-10V) RDS(ON)

FDS4435BZ

Marking：FDS4435BZ；Package：SO-8；P-Channel PowerTrench MOSFET -30V, -8.8A, 20mΩ

Features
MaxrDS(on)=20mΩatVGS=-10V,ID=-8.8A
MaxrDS(on)=35mΩatVGS=-4.5V,ID=-6.7A
ExtendedVGSSrange(-25V)forbatteryapplications
HBMESDprotectionlevelof±3.8KVtypical(note3)
HighperformancetrenchtechnologyforextremelylowrDS(on)
Highpowerand

FDS4435BZ-F085

Marking：FDS4435BZ；Package：SO-8；P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m