P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m廓

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

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Fairchild

仙童半导体

P-Channel PowerTrench® MOSFET

General Description\nThis P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.\nThis device is well suited for Power Management and load switching applications common in Notebook Computers an ■ Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A\n■ Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A\n■ Extended VGSS range (-25V) for battery applications\n■ HBM ESD protection level of ±3.8KV typical (note 3)\n■ High performance trench technology for extremely low rDS(on)\n■ High power and current hand;

ONSEMI

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SOP-8

ON

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SOP8

FSC

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SOP-8

Fairchild

仙童半导体

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