FDS4435BZ中文资料仙童半导体数据手册PDF规格书

General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

特性 Features

• –8.8 A, –30 V.

RDS(ON) = 20 mΩ @ VGS = –10 V

RDS(ON) = 35 mΩ @ VGS = – 4.5 V

• Extended VGSS range (–25V) for battery applications

• HBM ESD protection level of ±4.5 kV typical (note 3)

• High performance trench technology for extremely

low RDS(ON)

• High power and current handling capability

• Termination is Lead-free and RoHS compliant