丝印：FDS4435BZ；Package：SO-8；P-Channel PowerTrench MOSFET -30V, -8.8A, 20mΩ

Features
Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A
Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A
Extended VGSS range (-25V) for battery applications
HBM ESD protection level of ±3.8KV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and

文件：330.44 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：FDS4435BZ；Package：SOP-8；-30V P-Channel MOSFET

General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features VDS (V) =-30V ID = -8.8A (VGS = -10V) RDS(ON)

文件：429.15 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

30 Volt P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

文件：94.81 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m廓

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

文件：288.78 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

丝印：FDS4435BZ；Package：SO-8；P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m

文件：416.89 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m廓

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

文件：288.78 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

P-Channel 30-V (D-S) MOSFET

文件：1.00471 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P 沟道，PowerTrench® MOSFET，-30V，-8.8A，20mΩ

此P沟道MOSFET采用飞兆半导体先进的PowerTrench®工艺生产，这一先进工艺是专为最大程度地降低通态电阻而定制的。• 该器件非常适用于笔记本电脑和便携式电池组中的电源管理和负载开关应用。 •最大rDS(on) = 20mΩ（VGS = –10V且ID = –8.8A时）\n•最大rDS(on) = 35mΩ（VGS = –4.5V且ID = –6.7A时）\n•扩展了VGSS范围(-25V)，适合电池应用\n•HBM ESD保护等级为±3.8KV典型值（注3）\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率和高电流处理能力\n•终端是符合RoHS标准的无铅产品;

ONSEMI

安森美半导体

P-Channel PowerTrench® MOSFET

General Description\nThis P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.\nThis device is well suited for Power Management and load switching applications common in Notebook Computers an ■ Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A\n■ Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A\n■ Extended VGSS range (-25V) for battery applications\n■ HBM ESD protection level of ±3.8KV typical (note 3)\n■ High performance trench technology for extremely low rDS(on)\n■ High power and current hand;

ONSEMI

安森美半导体

P 沟道 PowerTrench® MOSFET -30V，-8.8A，20mΩ

此 P 沟道 MOSFET 采用飞兆先进的 Power Trench® 工艺生产，这一先进工艺是专为最大限度地降低导通电阻而定制的。 该器件非常适合笔记本电脑和便携电池组中的电源管理和负载开关应用。 •最大 rDS(on)= 20 mΩ （VGS = -10 V、ID= -8.8 A）\n•VGS = -4.5V且ID = -6.7A时，最大rDS(on) = 35mΩ \n•扩展了VGSS范围(-25V)，适合电池应用\n•HBM ESD保护等级为±3.8KV典型值（注3）\n•高性能沟道技术可实现极低的rDS(on)\n•高功率和高电流处理能力\n•终端是符合 RoHS 标准的无铅产品\n•符合 AEC Q101;

ONSEMI

安森美半导体