FDS4435BZ_07中文资料P-Channel PowerTrench® MOSFET数据手册ONSEMI规格书

描述 Description

General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

特性 Features

■ Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A
■ Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A
■ Extended VGSS range (-25V) for battery applications
■ HBM ESD protection level of ±3.8KV typical (note 3)
■ High performance trench technology for extremely low rDS(on)
■ High power and current handling capability
■ Termination is Lead-free and RoHS compliant

应用 Application

■ HBM ESD protection level of ±3.8KV typical (note 3)
■ High performance trench technology for extremely low rDS(on)
■ High power and current handling capability
■ Termination is Lead-free and RoHS compliant