丝印：FDS4465；Package：SO-8；P-Channel 1.8V Specified PowerTrench MOSFET

文件：499.71 Kbytes 页数：6 Pages

ONSEMI

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丝印：FDS4465；Package：SO-8；P-Channel 1.8V Specified PowerTrench MOSFET

文件：499.71 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V). Features • –13.5 A, –20 V. RDS(ON) = 8.5

文件：137.55 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel 1.8V Specified PowerTrench??MOSFET

文件：371.17 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel 30-V (D-S) MOSFET

文件：995 Kbytes 页数：9 Pages

VBSEMI

微碧半导体