丝印：FDS4685；40V P-Channel PowerTrench® MOSFET

Features ■ –8.2 A, –40 V RDS(ON) = 0.027 Ω @ VGS = –10 V RDS(ON) = 0.035 Ω @ VGS = –4.5 V ■ Fast switching speed ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability Applications ■ Power management ■ Load switch ■ Battery protectio

文件：611.72 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：FDS4685；40V P-Channel PowerTrench® MOSFET

Features ■ –8.2 A, –40 V RDS(ON) = 0.027 Ω @ VGS = –10 V RDS(ON) = 0.035 Ω @ VGS = –4.5 V ■ Fast switching speed ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability Applications ■ Power management ■ Load switch ■ Battery protectio

文件：611.72 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：P16TY；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Application ● High power and current handing capability ● Lead free product is acquired ● Surface mount package

文件：3.52988 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

40V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Features ■–8.2 A, –40 V RDS(ON)= 0.027

文件：506.52 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

P-Channel 40 V (D-S) MOSFET

文件：1.02499 Mbytes 页数：9 Pages

VBSEMI

微碧半导体