FDS5680芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
FDS5680	文件：235.59 Kbytes Page：7 Pages	丝印：FDS5680；60V N-Channel PowerTrench™ MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery p 文件：235.59 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
FDS5680	文件：235.59 Kbytes Page：7 Pages	丝印：FDS5680；60V N-Channel PowerTrench™ MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery p 文件：235.59 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
FDS5680	文件：261.75 Kbytes Page：8 Pages	60V N-Channel PowerTrench??MOSFET 60V N-Channel PowerTrench™ MOSFET 文件：261.75 Kbytes 页数：8 Pages	Fairchild 仙童半导体	Fairchild
FDS5680-TP	文件：2.30698 Mbytes Page：5 Pages	N-Channel Enhancement Mode Power MOSFET General Features ® Vos =60VIo 8A Roson 文件：2.30698 Mbytes 页数：5 Pages	TECHPUBLIC 台舟电子	TECHPUBLIC

更多FDS5680供应商更新时间2025-10-31 18:31:00