丝印：FDPC5018SG；Package：PowerClip56；PowerTrench® Power Clip 30V Asymmetric Dual N-Channel MOSFET

Features Q1: N-Channel Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A Low Inductance Packaging Shortens Rise/Fall Times, Resulting i

文件：341.99 Kbytes 页数：12 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：FDPC5018SG；Package：PowerClip56；PowerTrench® Power Clip 30V Asymmetric Dual N-Channel MOSFET

Features Q1: N-Channel Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A Low Inductance Packaging Shortens Rise/Fall Times, Resulting i

文件：341.99 Kbytes 页数：12 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司