丝印：FDPF035N06B；Package：TO-220F；MOSFET – N-Channel, POWERTRENCH 60 V, 88 A, 3.5 m

Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features • RDS(on) = 2.91 m (Typ.)@ VGS = 10 V, ID = 88 A • Low FOM RDS(on)*QG

文件：367.53 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FDPF035N06B；Package：TO-220F；MOSFET – N-Channel, POWERTRENCH 60 V, 88 A, 3.5 m

Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features • RDS(on) = 2.91 m (Typ.)@ VGS = 10 V, ID = 88 A • Low FOM RDS(on)*QG

文件：367.53 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=88A@ TC=25℃ ·Drain Source Voltage- : VDSS=660V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.35Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：323.6 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel PowerTrench MOSFET

文件：673.33 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司