丝印：FDPF8N60ZUT；Package：TO-220F；N-Channel UniFETTM II Ultra FRFETTM MOSFET 600 V, 6.5 A, 1.35 Ω

Features • RDS(on) = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 3.25 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 10 pF) • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • LCD/LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Desc

文件：704.51 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FDPF8N60ZUT；Package：TO-220F；N-Channel UniFETTM II Ultra FRFETTM MOSFET 600 V, 6.5 A, 1.35 Ω

Features • RDS(on) = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 3.25 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 10 pF) • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • LCD/LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Desc

文件：704.51 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=6.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.35Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：323.33 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET, FRFET 600V, 6.5A, 1.35廓

文件：540.52 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司