丝印：FDS2672；N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ

Features Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A Fast switching speed High performance trench technology for extremely low rDS(on) RoHS compliant General Description This single N-Channel MOSFET is produced using Fairchild Semiconductor’s

文件：455.11 Kbytes 页数：8 Pages

ONSEMI

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丝印：FDS2672；N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ

Features Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A Fast switching speed High performance trench technology for extremely low rDS(on) RoHS compliant General Description This single N-Channel MOSFET is produced using Fairchild Semiconductor’s

文件：455.11 Kbytes 页数：8 Pages

ONSEMI

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FAIRCHILD

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文件：563.01 Kbytes 页数：6 Pages

FAIRCHILD

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