丝印：FDPF041N06BL1；Package：TO-220F；MOSFET – N-Channel, POWERTRENCH 60 V, 77 A, 4.1 m

Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features • RDS(on) = 3.5 m (Typ.)@ VGS = 10 V, ID = 77 A • Low FOM RDS(on)*QG

文件：388.87 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

丝印：FDPF041N06BL1；Package：TO-220F；MOSFET – N-Channel, POWERTRENCH 60 V, 77 A, 4.1 m

Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features • RDS(on) = 3.5 m (Typ.)@ VGS = 10 V, ID = 77 A • Low FOM RDS(on)*QG

文件：388.87 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=77A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.1mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：323.71 Kbytes 页数：2 Pages

ISC

无锡固电