丝印：FDMC86116Z；Package：WDFN8；N-Channel Power MOSFET

Features • Max RDS(on) = 103 m at VGS = 10 V, ID = 3.3 A • Max RDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 A • HBM ESD Protection Level > 3 kV Typical (Note 1) • 100 UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • DC−DC Conversion General Description This N

文件：582.34 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FDMC86116Z；Package：WDFN8；N-Channel Power MOSFET

Features • Max RDS(on) = 103 m at VGS = 10 V, ID = 3.3 A • Max RDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 A • HBM ESD Protection Level > 3 kV Typical (Note 1) • 100 UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • DC−DC Conversion General Description This N

文件：582.34 Kbytes 页数：10 Pages

ONSEMI

安森美半导体