丝印：FDP2710；Package：TO220；Channel PowerTrench® MOSFET 250V, 50A, 47mΩ

General Description This N-Channel MOSFET is produced using ON Semi-conductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features -Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A -Typ Qg(TOT)

文件：520.059 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：FDP2710；Package：TO220；Channel PowerTrench® MOSFET 250V, 50A, 47mΩ

General Description This N-Channel MOSFET is produced using ON Semi-conductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features -Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A -Typ Qg(TOT)

文件：520.059 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

250V N-Channel PowerTrench MOSFET

文件：696.16 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

文件：327.8 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel PowerTrench짰 MOSFET 250V, 50A, 47m廓

文件：442.74 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel PowerTrench MOSFET

文件：442.74 Kbytes 页数：1 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司