丝印：FDP8443；Package：TO-220AB；N-Channel PowerTrench® MOSFET 40V, 80A, 3.5mΩ

Features - Typ rDS(on) = 2.7mΩ at VGS = 10V, ID = 80A - Typ Qg(10) = 142nC at VGS = 10V - Low Miller Charge - Low Qrr Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - Qualified to AEC Q101 - RoHS Compliant Applications - Automotive Engine Control - Powertrain Managemen

文件：555.13 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：FDP8443；Package：TO-220AB；N-Channel PowerTrench® MOSFET 40V, 80A, 3.5mΩ

Features - Typ rDS(on) = 2.7mΩ at VGS = 10V, ID = 80A - Typ Qg(10) = 142nC at VGS = 10V - Low Miller Charge - Low Qrr Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - Qualified to AEC Q101 - RoHS Compliant Applications - Automotive Engine Control - Powertrain Managemen

文件：555.13 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET

文件：299.03 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

文件：327.93 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel PowerTrench MOSFET

文件：454.83 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司