丝印：FDD2572；Package：TO-252AA；N-Channel PowerTrench짰 MOSFET 150V, 29A, 54m廓

文件：477.94 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：FDD2572；Package：TO-252AA；N-Channel PowerTrench짰 MOSFET 150V, 29A, 54m廓

文件：477.94 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

N-Channel PowerTrench MOSFET 150V, 29A, 54m?

Features • rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures

文件：247.74 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=29A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =54mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.94 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 150V, ID= 40 A RDS(ON)

文件：876.16 Kbytes 页数：4 Pages

Bychip

百域芯

N-Channel PowerTrench짰 MOSFET 150V, 29A, 54m廓

文件：578.58 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel 150 V (D-S) MOSFET

文件：1.00464 Mbytes 页数：9 Pages

VBSEMI

微碧半导体