丝印：FDD3682；Package：TO-252AA；N-Channel PowerTrench® MOSFET 100V, 32A, 36mΩ

Features • rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A • Qg(tot) = 18.5nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 • RoHS Compliant Applications • DC/DC converters and Off-Line UPS • Distribut

文件：368.86 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：FDD3682；Package：TO-252AA；N-Channel PowerTrench® MOSFET 100V, 32A, 36mΩ

Features • rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A • Qg(tot) = 18.5nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 • RoHS Compliant Applications • DC/DC converters and Off-Line UPS • Distribut

文件：368.86 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

• DESCRITION • DC-DC Converters and off-line UPS • High Voltage Synchronous Rectifier • FEATURES • Static drain-source on-resistance: RDS(on)≤36mΩ • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.54 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 40 A RDS(ON)

文件：817.88 Kbytes 页数：4 Pages

Bychip

百域芯

N-Channel PowerTrench MOSFET 100V, 32A, 36m?

Features • rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A • Qg(tot) = 18.5nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectur

文件：266.97 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel PowerTrench짰 MOSFET 100V, 32A, 36m廓

文件：426.02 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel PowerTrench짰 MOSFET

文件：426.02 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel 100-V (D-S) MOSFET

文件：984.77 Kbytes 页数：8 Pages

VBSEMI

微碧半导体