丝印：FDD9410；Package：D-PAK；N-Channel Power Trench짰 MOSFET

文件：706.74 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：FDD9410；Package：D-PAK；N-Channel Power Trench짰 MOSFET

文件：706.74 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=50A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =4.1mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：352.02 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=50A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =4.2mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：352.99 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：930.31 Kbytes 页数：4 Pages

Bychip

百域芯