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FDMC6675BZ

丝印:FDMC6675BZ;Package:MLP3.3X3.3;P-Channel PowerTrench® MOSFET -30 V, -20 A, 14.4 mΩ

Features Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A HBM ESD protection level of 8 kV typical(note 3) Extended VGSS range (-25 V) for battery applications High performance trench technology for extremely low rDS(on) High power an

文件:449.04 Kbytes 页数:9 Pages

ONSEMI

安森美半导体

FDMC6675BZ

丝印:FDMC6675BZ;Package:MLP3.3X3.3;P-Channel PowerTrench® MOSFET -30 V, -20 A, 14.4 mΩ

Features Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A HBM ESD protection level of 8 kV typical(note 3) Extended VGSS range (-25 V) for battery applications High performance trench technology for extremely low rDS(on) High power an

文件:449.04 Kbytes 页数:9 Pages

ONSEMI

安森美半导体

FDMC6675BZ

P-Channel Power Trench짰 MOSFET -30 V, -20 A, 14.4 m廓

文件:291.73 Kbytes 页数:7 Pages

FAIRCHILD

仙童半导体

详细参数

  • 型号:

    FDMC6675BZ

  • 功能描述:

    MOSFET -30V 20A P-Channel PowerTrench

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
25+
DFN8
12496
FAIRCHILD/仙童原装正品FDMC6675BZ即刻询购立享优惠#长期有货
询价
ON
19+21+
DFN
6000
全新原装公司现货
询价
ON/安森美
24+
MSOP12
9600
原装现货,优势供应,支持实单!
询价
NAN/安森美
21+
NA
8500
一级代理品牌,价格优势原装正品准则
询价
ON/安森美
22+
QFN
15000
原装正品
询价
仙童
24+
NA
6800
询价
ON/安森美
2021+
NA
9000
原装现货,随时欢迎询价
询价
ON/安森美
20+
NA
3000
询价
ON
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
NK/南科功率
2500
DFN3X3
36520
国产南科平替供应大量
询价
更多FDMC6675BZ供应商 更新时间2026-4-19 14:14:00