丝印：FDPF55N06；Package：TO-220F；N-Channel UniFET™ MOSFET 60 V, 55 A, 22 mΩ

Features • RDS(on) = 22 mΩ @VGS = 10 V, ID = 27.5 A • Low Gate Charge ( Typ. 30 nC) • Low Crss ( Typ. 60 pF) • 100% Avalanche Tested Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored t

文件：1.52805 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：FDPF55N06；Package：TO-220F；N-Channel UniFET™ MOSFET 60 V, 55 A, 22 mΩ

Features • RDS(on) = 22 mΩ @VGS = 10 V, ID = 27.5 A • Low Gate Charge ( Typ. 30 nC) • Low Crss ( Typ. 60 pF) • 100% Avalanche Tested Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored t

文件：1.52805 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=55A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：322.92 Kbytes 页数：2 Pages

ISC

无锡固电

60V N-Channel MOSFET

文件：1.18877 Mbytes 页数：10 Pages

FAIRCHILD

仙童半导体