丝印：FDD5353；Package：TO-252；60V N-Channel MOSFET

Features RoHS Compliant VDSS = 60V ID(at VGS=10V)10.7A RDS(ON) (at VGS=10V)

文件：515.75 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：FDD5353；Package：TO-252；60V N-Channel MOSFET

Features RoHS Compliant VDSS = 60V ID(at VGS=10V)10.7A RDS(ON) (at VGS=10V)

文件：515.75 Kbytes 页数：6 Pages

UMW

友台半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=50A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =12.3mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.52 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：993.7 Kbytes 页数：4 Pages

Bychip

百域芯

N-Channel Power Trench짰 MOSFET 60V, 50A, 12.3m廓

文件：285.67 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司