丝印：FDD86569；Package：D-PAK；N-Channel PowerTrench짰 MOSFET

文件：550.12 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：FDD86569；Package：D-PAK；N-Channel PowerTrench짰 MOSFET

文件：550.12 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=90A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.7mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：353.75 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：1.0634 Mbytes 页数：4 Pages

Bychip

百域芯