丝印：FDD9511L；Package：D-PAK；P-Channel Logic Level PowerTrench MOSFET

文件：208.41 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：FDD9511L；Package：D-PAK；P-Channel Logic Level PowerTrench MOSFET

文件：208.41 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -25A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 32mΩ(Max) @VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：353.22 Kbytes 页数：2 Pages

ISC

无锡固电