丝印：FDG6301N；Package：SC-88；Dual N-Channel, Digital FET

Features • 25 V, 0.22 A Continuous, 0.65 A Peak • RDS(ON) = 4 Ω @ VGS = 4.5 V, • RDS(ON) = 5 Ω @ VGS = 2.7 V. • Very Low Level Gate Drive Requirements allowing Directop− Eration in 3 V Circuits (VGS(th) 6 kV Human Body Model) • Compact Indu

文件：640.17 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：FDG6301N；Package：SC-88；Dual N-Channel, Digital FET

Features • 25 V, 0.22 A Continuous, 0.65 A Peak • RDS(ON) = 4 Ω @ VGS = 4.5 V, • RDS(ON) = 5 Ω @ VGS = 2.7 V. • Very Low Level Gate Drive Requirements allowing Directop− Eration in 3 V Circuits (VGS(th) 6 kV Human Body Model) • Compact Indu

文件：640.17 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：01；Package：SOT-363；Dual N-Channel, Digital FET

General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

文件：226.61 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：01；Package：SOT-363；Dual N-Channel, Digital FET

文件：351.8 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual N-Channel MOSFET

■ Features ● VDS (V) = 25V ● ID = 220m A (VGS = 4.5V) ● RDS(ON) 6kV Human Body Model).

文件：1.08153 Mbytes 页数：4 Pages

KEXIN

科信电子

Dual N-Channel, Digital FET

General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

文件：351.8 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual N-Channel, Digital FET

文件：351.8 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司