FDG6301N

Marking：01；Package：SOT-363；Dual N-Channel, Digital FET

GeneralDescription ThesedualN-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci

OPT4001YMNR

Marking：01；Package：PICOSTAR；OPT4001 High Speed, High Precision, Digital Ambient Light Sensor

1Features •Highprecision,highspeedlight-to-digital conversionoverhighspeedI2Cinterfaceintwo packagevariants •Precisionopticalfilteringtocloselymatchhuman eyewithexcellentnearinfrared(IR)rejection •Semi-logarithmicoutputwith9binarylogarithmic full-scalelight

OPT4001YMNT

Marking：01；Package：PICOSTAR；OPT4001 High Speed, High Precision, Digital Ambient Light Sensor

1Features •Highprecision,highspeedlight-to-digital conversionoverhighspeedI2Cinterfaceintwo packagevariants •Precisionopticalfilteringtocloselymatchhuman eyewithexcellentnearinfrared(IR)rejection •Semi-logarithmicoutputwith9binarylogarithmic full-scalelight

PDTA143EE

Marking：01；Package：SC-75；PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

PDTA143ET

Marking：01；Package：SOT23；PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

PDTA143EU

Marking：01；Package：SC-70；PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

PMXB56EN

Marking：01；Package：SOT1215；30 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN1010D-3 (SOT1215)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •TrenchMOSFETtechnology •LeadlessultrasmallandthinSMDp

RBR5L60ADD

Marking：01；Package：DO-214AC；Schottky Barrier Diode

●Features Highreliability Smallpowermoldtype LowVF ●Application Generalrectification

RT2856HGQW

Marking：01；Package：WQFN-14AL；6A, 18V, Synchronous Step-Down Converter

GeneralDescription TheRT2856Hisahighefficiency,monolithicsynchronous step-downDC/DCconverterthatcandeliverupto6Aoutput currentfroma4.5Vto18Vinputsupply.TheRT2856H current-modearchitecturewithexternalcompensation allowsthetransientresponsetobeoptimizedover

B0520W-ST

Marking：01；0.5A Surface Mount Schottky Barrier Rectifiers